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Same model may have multiple batches, images only for reference.
MT53E512M32D1ZW-046 AAT:B
Same model may have multiple batches, images only for reference.

MT53E512M32D1ZW-046 AAT:B

Part No MT53E512M32D1ZW-046 AAT:B
Manufacturer Micron Technology Inc.
Catalog Memory
Description LPDDR4 16G 512MX32 FBGA / SDRAM - Mobile LPDDR4X Memory IC 16Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Micron Technology Inc.
Series Automotive, AEC-Q100
Package Box
Product Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4X
Memory Size 16Gbit
Memory Organization 512M x 32
Memory Interface Parallel
Clock Frequency 2.133 GHz
Write Cycle Time - Word, Page 18ns
Access Time 3.5 ns
Voltage - Supply 1.06V ~ 1.17V
Temperature Range - Operating -40°C ~ 105°C (TC)
Mounting Type Surface Mount
Package / Case 200-TFBGA
Supplier Device Package 200-TFBGA (10x14.5)
REACH Status REACH Unaffected
Win Source Part Number 1356512-MT53E512M32D1ZW-046 AAT:B
Ultra Librarian 3D Model Ultra Librarian MT53E512M32D1ZW-046 AAT:B CAD Model

Description

Micron Technology Inc. manufactures the 16Gbit Mobile LPDDR4X SDRAM memory integrated circuit (IC).

  • Voltage Supply: 1.06V to 1.17V
  • Temperature Range: -40°C to 105°C
  • Package: 200-TFBGA
  • Package Size: 10x14.5
  • Memory Format: DRAM
  • Organization: 512M x 32
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time: 18ns
  • Access Time: 3.5ns
  • Application: Automotive

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