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APT10090BLLG

Part No APT10090BLLG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 12A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1969pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 298W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 1017935-APT10090BLLG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT10090BLLG CAD Model

Description

The APT10090BLLG from Microsemi Corporation is a MOSFET designed for use in a variety of applications.

  • Supply and Demand: Balance
  • Package Type: TO-247 [B]
  • Maximum Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 1mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.7274 $71.1822
6+ $19.4687 $116.8122
10+ $18.8604 $188.6040
13+ $18.2519 $237.2747
17+ $17.6435 $299.9395
22+ $15.8183 $348.0026
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,180 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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