APT20M38SVFRG

Part No APT20M38SVFRG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 67A D3PAK / Trans MOSFET N-CH 200V 67A 3-Pin(2+Tab) D3PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS V
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6120pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 370W (Tc)
Rds On (Maximum) @ Id, Vgs 38 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D3 [S]
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 768681-APT20M38SVFRG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT20M38SVFRG
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Win Source Part Number IXFT66N20QSN; IXFT66N20Q; IXFT60N20F; IXFT60N20FSN; 

Description

The APT20M38SVFRG manufactured by Microsemi Corporation is a POWER MOS V series electronic component. It is a discrete semiconductor product with a limited supply and demand status. The package type of this component is TO-268-3, D3Pak (2 Leads + Tab), TO-268AA. The operating temperature range of this component is -55°C to 150°C (TJ). The maximum power dissipation of APT20M38SVFRG is 370W (Tc). It is a N-channel type MOSFET with a drain source voltage of 200V and a gate charge (Qg) (maximum) @ Vgs of 225nC @ 10V. The alternative parts (cross-reference) for APT20M38SVFRG are IXFT66N20QSN, IXFT66N20Q, IXFT60N20F, and IXFT60N20FSN.

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