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Same model may have multiple batches, images only for reference.
APT30M70BVRG Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT30M70BVRG

Part No APT30M70BVRG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 100% Avalanche Tested
Datasheet
APT30M70BVRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS V
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5870pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 370W (Tc)
Rds On (Maximum) @ Id, Vgs 70 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 1146744-APT30M70BVRG
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT30M70BVRG CAD Model

Description

The Microsemi Corporation APT30M70BVRG is a POWER MOS V series MOSFET.

  • Series: POWER MOS V
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • Continuous Drain Current: 48A (Tc)
  • Maximum Rds On: 70 mOhm @ 500mA, 10V
  • Gate Charge: 225nC @ 10V
  • Vgs(th): 4V @ 1mA
  • Applications: Power supplies, motor control, and inverters
  • Manufacturer: Microsemi Corporation

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