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APT31N60BCSG

Part No APT31N60BCSG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 31A TO247-3
Datasheet
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Microsemi Corporation
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3055 pF @ 25 V
Power Dissipation (Max) 255W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 564063-APT31N60BCSG
Ultra Librarian 3D Model Ultra Librarian APT31N60BCSG CAD Model

Description

The APT31N60BCSG is a CoolMOS™ MOSFET from Microsemi Corporation.

  • Category: FETs and MOSFETs
  • Channel Type: N-channel
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 31A @ 25°C
  • Maximum On-Resistance: 100mOhm @ 18A drain current and 10V gate-source voltage
  • Gate Threshold Voltage: 3.9V @ 1.2mA drain current
  • Power Dissipation: 255W
  • Mounting Type: Through-hole
  • Package: TO-247-3
  • Gate Charge: 85nC @ 10V gate-source voltage
  • Product Status: Obsolete
  • ECCN: EAR99
  • REACH: Unaffected
  • Moisture Sensitivity Level: 1 (unlimited)

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