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Same model may have multiple batches, images only for reference.
APT38F80B2 Real Image
Same model may have multiple batches, images only for reference.

APT38F80B2

Part No APT38F80B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 41A T-MAX
Datasheet
APT38F80B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 2.5mA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 8070pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 1040W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package T-MAX [B2]
Dimension TO-247-3 Variant
Win Source Part Number 051463-APT38F80B2
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT38F80B2 CAD Model

Description

APT38F80B2

The APT38F80B2 Diode is crafted to deliver outstanding performance in rectification applications. This component excels in providing smooth, reliable operation across numerous high-power uses, making it essential for power management solutions.

  • Applications/Projects:
    • Rectifier circuits
    • Welders and plasma cutters
    • Battery chargers
    • Power factor correction (PFC) modules
  • Features & Benefits:
    • Exceptional reverse recovery performance
    • High voltage and current rating
    • Minimal power loss leading to improved efficiency
    • Extended operational lifespan
  • Additional Details:
    • Optimized for high-frequency rectification
    • Designed to handle rigorous operational conditions with stability

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