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Same model may have multiple batches, images only for reference.
APT5022BNG
Same model may have multiple batches, images only for reference.

APT5022BNG

Part No APT5022BNG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 27A TO247AD / N-Channel 500 V 27A (Tc) 360W (Tc) Through Hole TO-247AD
Datasheet
APT5022BNG Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Microsemi Corporation
Series POWER MOS IV®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 911645-APT5022BNG
Ultra Librarian 3D Model Ultra Librarian APT5022BNG CAD Model

Description

The APT5022BNG is a N-Channel MOSFET transistor from the POWER MOS IV® series.

  • Designed For: use in discrete semiconductor products, specifically in transistors and FETs
  • Drain to Source Voltage (Vdss): 500 V
  • Current Rating: 27A (Tc) @ 25°C
  • On-Resistance (Rds On): 220mOhm @ 13.5A and 10V
  • Gate-Source Voltage Threshold (Vgs(th)): 4V @ 1mA
  • Maximum Power Dissipation: 360W (Tc)
  • Mounting Type: through-hole
  • Package: TO-247-3
  • Gate Charge (Qg): 210 nC @ 10V
  • Input Capacitance (Ciss): 3500 pF @ 25V
  • Operating Temperature Range: -55°C to 150°C

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