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Same model may have multiple batches, images only for reference.
APT53N60BC6 Real Image
Same model may have multiple batches, images only for reference.

APT53N60BC6

Part No APT53N60BC6
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 53A TO-247
Datasheet
APT53N60BC6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.72mA
Max Gate Charge 154nC @ 10V
Max Input Capacitance 4020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 417W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 25.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 1005351-APT53N60BC6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT53N60BC6 CAD Model

Description

Microsemi Corporation's APT53N60BC6 is an N-channel MOSFET with a maximum power dissipation of 417W at Tc.

  • Maximum Power Dissipation: 417W @ Tc
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 53A @ 25°C
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-247 [B]

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.2356 $61.4136
14+ $8.3992 $117.5888
22+ $8.1358 $178.9876
30+ $7.8736 $236.2080
38+ $7.6115 $289.2370
51+ $6.8237 $348.0087
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Availability: 20,000 pieces
MOQ: 6 pcs
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