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Same model may have multiple batches, images only for reference.
APTM100DA33T1G Microsemi Corporation – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

APTM100DA33T1G

Part No APTM100DA33T1G
Manufacturer Microsemi Corporation
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 1000V 23A SP1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 396mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7868 pF @ 25 V
Power Dissipation (Max) 390W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SP1
Package / Case SP1
Ultra Librarian 3D Model Ultra Librarian APTM100DA33T1G CAD Model

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