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Same model may have multiple batches, images only for reference.
JAN2N1893 Real Image
Same model may have multiple batches, images only for reference.

JAN2N1893

Part No JAN2N1893
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 0.5A TO-5
Datasheet
JAN2N1893 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/182
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 5V @ 15mA, 150mA
Current - Collector Cutoff (Max) 10μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Power - Max 800mW
Mounting Style Through Hole
Package TO-205AA, TO-5-3 Metal Can
Manufacturer Device Package TO-5
Win Source Part Number 118414-JAN2N1893
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N1893 CAD Model

Description

The Microsemi Corporation JAN2N1893 transistor is an NPN bipolar transistor that has a maximum power of 800mW. It features a voltage rating of 80V and a current rating of 500mA.

  • Package: TO-5-3 metal can.
  • Manufacturer Device Package: TO-5.
  • Vce saturation: 5V @ 15mA, 150mA.
  • DC current gain (hFE): 40 @ 150mA, 10V.
  • Series: Military, MIL-PRF-19500/182.
  • Packaged in: bulk.
  • Popularity: medium.
  • Supply and demand status: balanced.
  • Quantity per package: 1.

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