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Same model may have multiple batches, images only for reference.
JAN2N3440 Real Image
Same model may have multiple batches, images only for reference.

JAN2N3440

Part No JAN2N3440
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN LOW POWER SILICON TRANSISTOR | TRANS NPN 250V 1A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) at Ib, Ic 500mV at 4mA, 50mA
Current - Collector Cutoff (Maximum) 2μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 40 at 20mA, 10V
Maximum Power 800mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191386-JAN2N3440
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian JAN2N3440 CAD Model

Description

The JAN2N3440 is an NPN transistor that is suitable for use in discrete semiconductor products. JAN2N3440.

  • Supplier Device Package: TO-39
  • Operating Temperature: -65°C to 200°C
  • Maximum Collector Current: 1A
  • Maximum Collector-Emitter Breakdown Voltage: 250V
  • DC Current Gain: 40 @ 20mA, 10V
  • Vce Saturation: 500mV @ 4mA, 50mA

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