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JANTX1N5553US

Part No JANTX1N5553US
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 800V 3A B-MELF
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Microsemi Corporation
Packaging Bulk
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 800V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Maximum) at If 1.3V at 9A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2μs
Current - Reverse Leakage at Vr 1μA at 800V
Mounting Style SMD
Manufacturer Package SQ-MELF, B
Supplier Device Package D-5B
Operating Temperature - Junction -65°C ~ 175°C
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813078-JANTX1N5553US
Ultra Librarian 3D Model Ultra Librarian JANTX1N5553US CAD Model

Description

The JANTX1N5553US is a standard diode manufactured by Microsemi Corporation. It has a reverse recovery time (trr) of 2μs and a current average rectified (Io) of 3A. The operating temperature range of this diode is -65°C to 175°C. The voltage DC reverse (Vr) maximum is 800V and the voltage forward (Vf) maximum at If is 1.3V at 9A. The diode type is standard and the speed is standard recovery > 500ns, > 200mA (Io). The JANTX1N5553US comes in a D-5B supplier device package with an SMD mounting style. The manufacturer pack quantity is 1 and the MSL level is 1 (Unlimited). The current reverse leakage at Vr is 1μA at 800V.

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