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Same model may have multiple batches, images only for reference.
JANTX2N3637 Real Image
Same model may have multiple batches, images only for reference.

JANTX2N3637

Part No JANTX2N3637
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description PNP SILICON AMPLIFIER TRANSISTOR | TRANS PNP 175V 1A TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 175V
Vce Saturation (Maximum) at Ib, Ic 600mV at 5mA, 50mA
Current - Collector Cutoff (Maximum) 10μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 50mA, 10V
Maximum Power 1W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191501-JANTX2N3637
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N3637 CAD Model

Description

The Microsemi Corporation JANTX2N3637 is a PNP transistor that is designed for use in various electronic devices.

  • Maximum Collector-Emitter Voltage: 175V
  • Maximum Collector Current: 1A
  • Operating Temperature Range: -65°C to 200°C
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.5225 $67.5675
7+ $18.4800 $129.3600
10+ $17.9025 $179.0250
14+ $17.3250 $242.5500
18+ $16.7475 $301.4550
24+ $15.0150 $360.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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