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JANTX2N5667

Part No JANTX2N5667
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN POWER SILICON SWITCHING TRANSISTOR | TRANS NPN 300V 5A TO-5
Sample
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 300V
Vce Saturation (Maximum) at Ib, Ic 1V at 1A, 5A
Current - Collector Cutoff (Maximum) 200nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 25 at 1A, 5V
Maximum Power 1.2W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191513-JANTX2N5667
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N5667 CAD Model

Description

The JANTX2N5667 is a high-reliability NPN silicon bipolar junction transistor (BJT) manufactured by Microsemi Corporation. This transistor is specifically designed and manufactured to meet stringent military and aerospace requirements. It's used in applications demanding consistent performance and durability in harsh environments.

Applications

  • High-reliability switching circuits
  • Amplifier circuits in military and aerospace equipment
  • Voltage regulators
  • Inverter circuits
  • High-speed pulse circuits

Features

  • NPN Silicon Bipolar Transistor
  • JANTX Qualification (High-Reliability Screening)
  • High Collector-Emitter Breakdown Voltage
  • Low Saturation Voltage
  • Hermetically Sealed Package
  • High Switching Speed

Benefits

  • Guaranteed performance in demanding environments
  • Long-term reliability and stability
  • Consistent electrical characteristics
  • Reduced downtime and maintenance costs
  • Enhanced system performance due to robust design

Specifications

The JANTX2N5667 typically features a collector-emitter breakdown voltage (VCEO) of 300V, collector current (IC) of 0.5A and a power dissipation of 5W, depending on package and temperature conditions. The DC current gain (hFE) usually falls within the range of 20 to 100. The device is housed in a hermetically sealed TO-5 or similar through-hole package for superior protection against environmental factors. The operating junction temperature ranges from -65°C to +200°C. The transistor’s low saturation voltage minimizes power loss in switching applications, and the high breakdown voltage accommodates high voltage requirements. The transistor's transition frequency (fT) is high, contributing to fast switching speeds.

The JANTX2N5667's high-reliability screening ensures functionality under extreme conditions found in aerospace and military sectors. The sealed package protects the transistor from moisture and contaminants, extending its operational lifespan. Its suitability lies in applications requiring stable and predictable performance in harsh operating environments, and is frequently used in aerospace and military circuits where guaranteed performance is critical.

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