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Same model may have multiple batches, images only for reference.
JANTX2N5745
Same model may have multiple batches, images only for reference.

JANTX2N5745

Part No JANTX2N5745
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description PNP HIGH POWER SILICON TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/433
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 20A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) @ Ib, Ic 1V @ 1A, 10A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 15 @ 10A, 2V
Power - Max 5W
Operating Temperature Range -55°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-204AA, TO-3
Manufacturer Package TO-3 (TO-204AA)
RoHS State Request Verification
Win Source Part Number 1191515-JANTX2N5745
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name 2N5745
Introduction Date Nov 19, 1998
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian JANTX2N5745 CAD Model

Description

The Microsemi Corporation 1191515-JANTX2N5745 is a PNP transistor type electronic component that is designed for use in discrete semiconductor products.

  • Mounting Style: Through Hole
  • Maximum Power: 5W
  • Collector-Emitter Breakdown Voltage (Max): 80V
  • Collector Current (Max): 20A
  • Package: TO-3 (TO-204AA), TO-204AA

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