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Same model may have multiple batches, images only for reference.
JANTX2N6052 Real Image
Same model may have multiple batches, images only for reference.

JANTX2N6052

Part No JANTX2N6052
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description PNP DARLINGTON POWER SILICON TRANSISTOR | TRANS PNP DARL 100V 12A TO-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 12A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) at Ib, Ic 3V at 120mA, 12A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 1000 at 6A, 3V
Maximum Power 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-204AA, TO-3
Supplier Device Package TO-204AA (TO-3)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191516-JANTX2N6052
Manufacturer Homepage www.micrel.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6052 CAD Model

Description

The Microsemi Corporation PNP-Darlington transistor is a high power, high voltage device designed for use in a variety of applications.

  • Maximum Collector Current: 12A
  • Breakdown Voltage: 100V
  • Mounting: Through a hole
  • Package: TO-204AA (TO-3)
  • Current Collector Cutoff: 1mA
  • Operating Temperatures: -55°C to 175°C
  • DC Current Gain: 1000 @ 6A and 3V

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