The Microsemi Corporation MOSFET is a high-performance N-channel transistor that features a drain-source breakdown voltage of 200V and a continuous drain current of 27.4A. With a maximum Rds On of 105mOhm at 27.4A and 10V, this MOSFET is designed for through-hole mounting and is available in a TO-254AA package. It has a maximum power dissipation of 4W and 150W and a gate-source voltage of ±20V. The drive voltage required is 10V (Max Rds On, Min Rds On). It operates in a temperature range of -55°C to 150°C and is classified as obsolete. The manufacturer homepage is www.irf.com. The Microsemi Corporation MOSFET is suitable for use in discrete semiconductor products.