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Same model may have multiple batches, images only for reference.
MS1226
Same model may have multiple batches, images only for reference.

MS1226

Part No MS1226
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 36V 30MHZ M113 / RF Transistor NPN 36V 4.5A 30MHz 80W Chassis Mount M113
Datasheet
MS1226 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 36V
Frequency - Transition 30MHz
Gain 18dB
Power - Max 80W
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 5V
Current - Collector (Ic) (Max) 4.5A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M113
Supplier Device Package M113
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 150-MS1226,MS1226-ND
Standard Package 1
Win Source Part Number 1012521-MS1226
Ultra Librarian 3D Model Ultra Librarian MS1226 CAD Model

Description

The Microsemi Corporation 1012521-MS1226 is an NPN bipolar transistor IC that features a power of 80W and a voltage of 36V.

  • Power: 80W
  • Voltage: 36V
  • Mounting: chassis mount
  • Package: bulk package
  • Series: M113 series
  • Applications: radio frequency (RF) amplifiers and oscillators
  • Gain: 18dB
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Frequency Transition: 30MHz
  • Category: discrete semiconductor products
  • MSL Level: 1 (Unlimited)
  • REACH: REACH unaffected
  • HTSUS Code: 8541.29.0095

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