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Same model may have multiple batches, images only for reference.
MS2212
Same model may have multiple batches, images only for reference.

MS2212

Part No MS2212
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 55V 1.215GHZ M222 / RF Transistor NPN 55V 1.8A 960MHz ~ 1.215GHz 50W Chassis Mount M222
Datasheet
MS2212 Datasheet
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 55V
Frequency - Transition 960MHz ~ 1.215GHz
Gain 8.1dB ~ 8.9dB
Power - Max 50W
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 500mA, 5V
Current - Collector (Ic) (Max) 1.8A
Temperature Range - Operating 250°C (TJ)
Mounting Chassis Mount
Case / Package M222
Supplier Device Package M222
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 150-MS2212,MS2212-ND
Standard Package 1
Win Source Part Number 1325039-MS2212
Ultra Librarian 3D Model Ultra Librarian MS2212 CAD Model

Description

The MS2212 is an NPN bipolar transistor used in RF applications, manufactured by Microsemi Corporation.

  • Maximum Power: 50W
  • Maximum Voltage: 55V
  • Gain: 8.1dB ~ 8.9dB
  • Frequency Transition Range: 960MHz ~ 1.215GHz
  • Mounting: Chassis Mount
  • Case/Package: M222
  • ECCN: EAR99
  • Status: Obsolete
  • Win Source Part Number: 1325039-MS2212

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