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Same model may have multiple batches, images only for reference.
PT1203 Microsemi Corporation
Same model may have multiple batches, images only for reference.

PT1203

Part No PT1203
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 30A SOT-227
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V (1.2kV)
Continuous Drain Current at 25°C 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 5mA
Max Gate Charge 365nC @ 10V
Max Input Capacitance 9480pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 690W (Tc)
Maximum Rds On at Id,Vgs 330 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package ISOTOP
Dimension SOT-227-4, miniBLOC
Win Source Part Number 210301-PT1203
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PT1203 CAD Model

Description

The Microsemi Corporation 210301-PT1203 is a high power MOSFET that is designed for use in various applications.

  • Maximum Power Dissipation: 690W
  • Continuous Drain Current: 30A @ 25°C
  • Package: Tube/rail
  • Mounting: Chassis
  • Polarity: N-channel
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Microsemi Corporation
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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