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2SA1989-T11-1S

Part No 2SA1989-T11-1S
Manufacturer Mitsubishi
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1036632-2SA1989-T11-1S
Categories OEM Parts(0-9)
Manufacturer Mitsubishi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1989-T11-1S CAD Model

Description

The 2SA1989-T11-1S is a PNP epitaxial silicon transistor manufactured by Mitsubishi. This transistor is designed for use in various amplifier and switching applications.

Applications

  • Audio Amplifiers: Used in pre-amplifier and power amplifier stages for signal amplification.
  • Switching Circuits: Employed in circuits that require high-speed switching capabilities.
  • General Purpose Amplification: Suitable for general-purpose signal amplification in various electronic devices.
  • Driver Stages: Can be used as a driver for higher-power transistors or other components.

Features

  • High Collector Current (Ic): Capable of handling substantial collector current, enabling its use in medium power applications.
  • Low Saturation Voltage: Low VCE(sat) ensures minimal power loss and efficient switching.
  • High Transition Frequency: Offers high transition frequency for high-speed performance.
  • Epitaxial Silicon Structure: Provides reliable and consistent performance.
  • PNP Polarity: Suitable for applications requiring a PNP transistor.

Benefits

  • Improved Amplifier Performance: Provides excellent amplification with low distortion in audio applications.
  • Efficient Switching: Ensures efficient switching operation with minimal power loss.
  • Reliable Operation: Mitsubishi's quality ensures reliable performance in various operating conditions.
  • Versatile Usage: Can be used in a wide range of amplifier and switching circuits.

Specifications

While specific electrical characteristics can vary based on batch and testing conditions, typical specifications include:

  • Polarity: PNP
  • Collector-Emitter Voltage (VCEO): -50V (example, verify datasheet)
  • Collector Current (IC): -2A (example, verify datasheet)
  • Power Dissipation (PC): 1W (example, verify datasheet)
  • Transition Frequency (fT): 100 MHz (example, verify datasheet)
  • Operating Temperature: -55°C to +150°C (example, verify datasheet)

Always refer to the official Mitsubishi datasheet for precise electrical characteristics and application guidelines.

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