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RT1N241M-T150-1

Part No RT1N241M-T150-1
Manufacturer Mitsubishi
Catalog HOT - SALES and EOL Components (Q - R)
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Manufacturer Mitsubishi
Win Source Part Number 299671-RT1N241M-T150-1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RT1N241M-T150-1 CAD Model

Description

The RT1N241M-T150-1 is a transient voltage suppressor (TVS) diode manufactured by Mitsubishi. It is designed to protect sensitive electronic components from voltage surges and electrostatic discharge (ESD). This diode is part of the RT1N series, known for its fast response time and high surge current capability.

Applications

  • Protection of I/O interfaces in various electronic devices.
  • ESD protection for data lines and power lines.
  • Surge protection in communication equipment.
  • Protection of microcontrollers and microprocessors from voltage transients.
  • Automotive electronics for protecting sensitive circuits.

Features

  • High surge current capability: Designed to withstand high transient currents without degradation.
  • Fast response time: Quickly clamps voltage spikes, protecting downstream components.
  • Low clamping voltage: Limits the voltage across the protected device, ensuring its safety.
  • Small package size: Allows for compact circuit designs.
  • AEC-Q101 qualified: Suitable for automotive applications due to its high reliability and robustness.

Benefits

  • Enhanced system reliability: Protects against voltage surges, extending the lifespan of electronic devices.
  • Reduced downtime: Prevents damage from ESD and other voltage transients, minimizing system failures.
  • Improved product safety: Ensures compliance with safety standards by protecting against electrical hazards.
  • Cost-effective protection: Provides a reliable and affordable solution for voltage surge protection.
  • Simplified circuit design: Easy to integrate into existing circuit designs due to its small size and standard pinout.

Additional Details

The RT1N241M-T150-1 typically features a peak pulse power dissipation of several hundred watts, depending on the specific conditions. Its clamping voltage is carefully selected to provide optimal protection for the target application. The diode's construction ensures low leakage current and high reliability over a wide temperature range. The device utilizes a robust silicon avalanche technology, enhancing its ability to handle repetitive surge events. Specific electrical characteristics such as breakdown voltage, clamping voltage, and reverse leakage current are available in the manufacturer's datasheet.

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