The 2SA1383 is a silicon PNP epitaxial planar transistor manufactured by NEC. This transistor is designed for use in high-voltage, high-speed switching, and amplifier applications. It offers excellent performance characteristics suitable for various industrial and consumer electronic devices.

Applications:

• High-voltage switching circuits
• High-speed switching applications
• Amplifier circuits (e.g., audio amplifiers, video amplifiers)
• Power supplies
• Motor control circuits

Features:

• PNP Silicon Epitaxial Planar Transistor
• High Collector-Emitter Voltage (VCEO)
• High Switching Speed
• Low Saturation Voltage
• Excellent hFE Linearity

Benefits:

• Enables efficient and reliable switching performance in high-voltage circuits.
• Suitable for fast switching applications requiring minimal delay.
• Provides stable and linear amplification in amplifier circuits.
• Allows for the design of compact and efficient power supplies.
• Contributes to improved performance and reliability in electronic devices.

Additional Details:

The 2SA1383's electrical characteristics include a collector-base voltage (VCBO) of -180V, a collector-emitter voltage (VCEO) of -160V, and an emitter-base voltage (VEBO) of -5V. The collector current (IC) is rated at -1A, and the collector power dissipation (PC) is 10W. The current gain (hFE) typically ranges from 50 to 200, depending on the specific operating conditions. The transition frequency (fT) is typically around 50 MHz. It is available in a TO-126 type package.