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Same model may have multiple batches, images only for reference.
AN1L3N Real Image
Same model may have multiple batches, images only for reference.

AN1L3N

Part No AN1L3N
Manufacturer NEC
Catalog Transistors (BJT) - Single, Pre - Biased
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr NEC
Package Bulk
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 250 mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 561908-AN1L3N
Ultra Librarian 3D Model Ultra Librarian AN1L3N CAD Model

Description

The AN1L3N is a pre-biased PNP bipolar transistor manufactured by NEC.

  • Application: Discrete Semiconductor Products (Bipolar Transistors)
  • Power Dissipation: 250mW (Maximum)
  • Collector-Emitter Breakdown Voltage: 50V (Maximum)
  • Collector Current (Ic): 100mA (Maximum)
  • Saturation Voltage (Vce Saturation): 200mV @ 250µA (Ib) and 5mA (Ic)
  • Package: TO-226-3, TO-92-3
  • Resistor-Base Value: 4.7 kOhms
  • Resistor-Emitter Base Value: 10 kOhms
  • Product Status: Active

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