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Same model may have multiple batches, images only for reference.
NP80N055MDG-S18-AY NEC
Same model may have multiple batches, images only for reference.

NP80N055MDG-S18-AY

Part No NP80N055MDG-S18-AY
Manufacturer NEC
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO220  /  N-Channel 55 V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr NEC Corporation
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 6.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta), 115W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
RoHS Status Not applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-NP80N055MDG-S18-AY-NEC,RENNECNP80N055MDG-S18-AY
Standard Package 50
Win Source Part Number 1190945-NP80N055MDG-S18-AY
Ultra Librarian 3D Model Ultra Librarian NP80N055MDG-S18-AY CAD Model

Description

The NEC NP80N055MDG-S18-AY is a N-Channel MOSFET transistor that is part of the discrete semiconductor products.

  • Manufacturer: NEC
  • Channel Type: N-Channel
  • Drain to Source Voltage: 55 V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On: 6.9mOhm @ 40A and 10V
  • Maximum Gate Charge: 135 nC @ 10 V
  • Input Capacitance: 6900 pF @ 25 V
  • Maximum Power Dissipation @ Ta: 1.8W
  • Maximum Power Dissipation @ Tc: 115W
  • Mounting: Through Hole
  • Package: TO-220-3
  • Status: Obsolete
  • RoHS Compliant: No

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