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NP88N075MUE

Part No NP88N075MUE
Manufacturer NEC
Catalog Transistors - FETs, MOSFETs - RF
Description MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 1232028-NP88N075MUE
Manufacturer Homepage www.nec.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP88N075MUE CAD Model

Description

The NP88N075MUE is an N-channel power MOSFET manufactured by NEC (now Renesas Electronics). This MOSFET is optimized for high-efficiency switching applications, providing a combination of low on-resistance and fast switching characteristics. It is commonly used in synchronous rectification, DC-DC converters, and power management systems found in computing and telecommunications equipment.

Applications

  • Synchronous Rectification: Improves efficiency in power supplies.
  • DC-DC Converters: Enables efficient power conversion in various electronic devices.
  • Power Management Systems: Used in battery charging and power distribution circuits.
  • Load Switching: Controls power to various loads in electronic systems.
  • Adapter circuits: Use in external DC adapters.

Features

  • N-channel MOSFET: Designed for positive voltage switching applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses for higher efficiency.
  • Fast Switching Speed: Allows for higher frequency operation and reduced switching losses.
  • Low Gate Charge: Reduces gate drive requirements and switching losses.
  • High Avalanche Energy: Provides robustness against voltage transients.
  • Surface Mount Package: Suitable for automated assembly and high-density designs.

Benefits

  • High Efficiency: Low on-resistance minimizes power dissipation, improving system efficiency.
  • Reduced Switching Losses: Fast switching speed and low gate charge contribute to lower overall losses.
  • Reliable Operation: High avalanche energy ensures robust performance in demanding applications.
  • Simplified Gate Drive: Low gate charge simplifies the gate drive circuitry, reducing component count.
  • Compact Design: Surface mount package minimizes board space, enabling smaller product designs.

Additional Details

The NP88N075MUE is designed with a focus on minimizing both conduction and switching losses, making it suitable for high-frequency, high-efficiency power conversion. The device's thermal resistance is an important parameter to consider for power dissipation management; adequate heat sinking may be necessary in certain applications. It's important to stay within the specified maximum drain current and drain-source voltage ratings to ensure reliable operation. The gate threshold voltage is specified in the datasheet. Gate threshold voltage is important for proper gate driving. Typically, the gate threshold voltage allows the part to switch fully on with only 5V applied to the gate. Review the datasheet for the specific Vgs to achieve the guaranteed Rds(on). The NP88N075MUE meets industry standard environmental compliance regulations. Refer to the official datasheet for comprehensive specifications, application guidelines, and recommended PCB layout. The package is typically a surface mount package like DPAK or similar.

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