The UPA2710GR is a P-channel Power MOS Field Effect Transistor (MOSFET) from NEC (now Renesas Electronics). This MOSFET is designed for high-speed switching applications and power management in portable devices and other electronic equipment. It offers low on-resistance and fast switching speeds, contributing to efficient power usage and compact designs.

Applications

• Load switches
• DC-DC converters
• Power management circuits in portable devices
• Battery protection circuits
• Motor control circuits

Features

• P-Channel MOSFET
• Low on-resistance (RDS(on))
• High-speed switching
• Surface mount package
• Logic level drive
• RoHS compliant

Benefits

• Efficient power switching
• Reduced power loss
• Compact design due to small package
• Direct logic-level interface
• Environmentally friendly

Additional Details

The UPA2710GR features a low gate threshold voltage, enabling direct drive from logic-level signals. Its small surface mount package allows for high-density board layouts. The low on-resistance minimizes power dissipation, improving overall system efficiency and reducing heat generation. The specific package is SOT-23. Key electrical characteristics include a drain-source voltage (VDS) of -20V, gate-source voltage (VGS) of ±10V, and continuous drain current (ID) of -1.5A. This MOSFET is well-suited for applications where space and power efficiency are critical.