The MPS4126RLRA is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This general-purpose amplifier is designed for medium power linear and switching applications, making it a versatile component for a wide range of electronic circuits.

Key Features

• Device Type: NPN Bipolar Junction Transistor (BJT)
• Package: TO-92 Type, making it easy to install in various circuit boards.
• Collector-Emitter Voltage (VCEO): 80V, providing a good range for medium power applications.
• Collector-Base Voltage (VCBO): 80V, ensuring stable operation under high voltage conditions.
• Emitter-Base Voltage (VEBO): 6.0V, suitable for most general-purpose applications.
• Collector Current (IC): 200 mA, offering sufficient current handling capability for a variety of uses.
• Power Dissipation (Pd): 625 mW, allowing it to handle moderate levels of power without overheating.
• DC Current Gain (hFE): 100 - 300, providing a reliable and predictable amplification factor.
• Polarity: NPN, a common configuration for amplifiers and switches.

Applications

The MPS4126RLRA transistor is ideal for use in a broad spectrum of applications, including but not limited to:

• Signal amplification circuits
• Switching circuits
• Audio amplifiers
• Driver stages in hi-fi amplifiers and television circuits
• Power management in portable and consumer electronics

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the MPS4126RLRA transistor is reliable for both commercial and industrial environments. With its robust design, it delivers consistent performance, making it a preferred choice for engineers and designers looking for a dependable general-purpose transistor.

Environmental Compliance

The MPS4126RLRA transistor is compliant with RoHS (Restriction of Hazardous Substances) directives, making it an environmentally friendly choice for electronic projects. This compliance ensures that it can be used in products sold in regions with strict environmental standards.