The UPD444012AGY-B70X-MJH is a high-speed 4M x 4 bit Dynamic Random Access Memory (DRAM) manufactured by NEC (now Renesas Electronics). It is designed for applications requiring fast access times and high memory density, such as graphics cards, high-performance computing, and embedded systems.

Applications:

• Graphics cards
• High-performance computing
• Embedded systems
• Digital signal processing
• Video processing

Features:

• Organization: 4M x 4 bits
• High-speed access time (70ns)
• Package: SOJ
• Refresh Mode: Self Refresh
• Power Supply: 5V

Benefits:

• Fast data access for demanding applications
• High memory density in a compact package
• Low power consumption in self-refresh mode
• Easy integration into memory systems
• Reliable data storage

Additional Details:

The UPD444012AGY-B70X-MJH DRAM is designed for applications that require rapid data access and large memory capacity. The 70ns access time ensures quick data retrieval, improving system performance. The SOJ (Small Outline J-Lead) package provides a compact footprint, making it suitable for space-constrained applications. The self-refresh mode reduces power consumption when the memory is not actively being accessed. This DRAM is commonly used in graphics cards to store texture data, frame buffers, and other graphical information. It is also employed in high-performance computing systems as main memory or cache memory. Its 4M x 4 bit organization provides a balance between memory density and data bandwidth. The DRAM is designed to operate with a 5V power supply, simplifying system design. NEC's (now Renesas Electronics) rigorous testing and quality control ensure the reliability and performance of this memory device.