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BC807-25QC-QZ

Part No BC807-25QC-QZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.5A DFN1412D-3 / Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 380 mW Surface Mount, Wettable Flank DFN1412D-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 380 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 934662748147,1727-BC807-25QC-QZCT,1727-BC807-25QC-QZDKR,1727-BC807-25QC-QZTR
Standard Package 5,000
Win Source Part Number 992095-BC807-25QC-QZ
Ultra Librarian 3D Model Ultra Librarian BC807-25QC-QZ CAD Model

Description

The Nexperia USA Inc. BC807-25QC-QZ is a PNP transistor designed for use in electronic devices.

  • Maximum Power: 380mW
  • Maximum Collector-Emitter Breakdown Voltage: 45V
  • Mounting: Surface mount, wettable flank technology
  • Packaging: Tape and reel
  • Frequency Transition: 80MHz
  • Minimum DC Current Gain: 160 @ 100mA, 1V

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