The BC817W,115 is a high-performance, surface-mount NPN Bipolar Junction Transistor (BJT) from NXP Semiconductors, renowned for its efficiency and reliability in a wide array of electronic applications. This small-signal transistor is designed to meet the rigorous demands of modern circuit designs, providing a compact solution with low power dissipation.

Key Features

• Transistor Polarity: NPN - suitable for amplification and switching applications.
• Collector-Emitter Voltage (Vceo): 45V - can handle moderate voltage applications.
• Collector Current (Ic): 500mA - capable of driving moderate loads.
• Power Dissipation (Pd): 250mW - ensures efficient operation without overheating.
• DC Current Gain (hFE): 100 to 600 - provides a wide range of amplification possibilities.
• Package: SOT-323 - a small footprint package ideal for space-constrained applications.

Applications

The BC817W,115 is versatile and can be used in various applications, including:

• Driver stages in hi-fi amplifiers and television circuits.
• Switching loads in consumer electronics.
• Signal processing in communication devices.
• Control systems in automotive technology.
• Power management in portable devices.

Quality and Reliability

NXP Semiconductors is committed to delivering products that exceed industry standards for quality and reliability. The BC817W,115 is manufactured with state-of-the-art technology ensuring high performance and stability over its operational life. Its robust design is suited for commercial-grade applications where durability is essential.

Environmental Compliance

Consistent with NXP's dedication to environmental stewardship, the BC817W,115 complies with RoHS directives, highlighting the commitment to reducing the environmental impact of electronic components. This transistor is a lead-free product, making it a responsible choice for eco-conscious manufacturers and designers.