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BC847DS,115

Part No BC847DS,115
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS 2NPN 45V 0.1A 6TSOP  /  Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 380mW Surface Mount 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-74, SOT-457
Supplier Device Package 6-TSOP
Base Product Number BC847
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-BC847DS,115-NEX,934063469115,NEXNEXBC847DS,115
Standard Package 3,000
Win Source Part Number 1160004-BC847DS,115
Ultra Librarian 3D Model Ultra Librarian BC847DS,115 CAD Model

Description

The BC847DS,115 is a dual NPN bipolar transistor array, designed for use in automotive applications.

  • Part: BC847DS,115
  • Manufacturer: Nexperia USA Inc.
  • Application: Automotive
  • Maximum Power: 380mW
  • Voltage Breakdown: 45V
  • Maximum Collector Current: 100mA
  • Transistor Type: 2 NPN
  • Vce Saturation: 300mV @ 5mA and 100mA
  • Maximum Collector Cutoff: 15nA (ICBO)
  • DC Current Gain: 200 @ 2mA and 5V
  • Frequency Transition: 100MHz
  • Package/Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
  • Operating Temperature: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2609 $50.8755
470+ $0.2140 $100.5800
725+ $0.2074 $150.3650
1,000+ $0.2007 $200.7000
1,290+ $0.1940 $250.2600
1,730+ $0.1739 $300.8470
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