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BSP030,115

Part No BSP030,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 770pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.3W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024422-BSP030,115
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian BSP030,115 CAD Model

Description

The Nexperia USA Inc. BSP030,115 is a N-channel MOSFET designed for surface mount technology.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum Power Dissipation: 8.3W (Tc)
  • Maximum Rds On: 30 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 770pF @ 24V
  • Package: SOT-223
  • Dimension: TO-261-4, TO-261AA
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1767 $58.3110
795+ $0.1455 $115.6725
1,230+ $0.1409 $173.3070
1,695+ $0.1363 $231.0285
2,195+ $0.1317 $289.0815
2,945+ $0.1178 $346.9210
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 132 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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