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Same model may have multiple batches, images only for reference.
BSP225,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSP225,115

Part No BSP225,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 0.225A SOT223
Datasheet
BSP225,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Input Capacitance 90pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 15 Ohm @ 200mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024436-BSP225,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP225,115 CAD Model

Description

The Nexperia USA Inc. BSP225,115 is a P-Channel MOSFET that is a part of the discrete semiconductor products category.

  • Power Dissipation: 1.5W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: 150°C (TJ)
  • Case/Package: SOT-223
  • Dimension: TO-261-4, TO-261AA
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 225mA (Ta)
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Max Input Capacitance: 90pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 15 Ohm @ 200mA, 10V

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