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Same model may have multiple batches, images only for reference.
BSS138BKW,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSS138BKW,115

Part No BSS138BKW,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V SOT323
Datasheet
BSS138BKW,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 0.7nC @ 4.5V
Max Input Capacitance 56pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 260mW (Ta), 830mW (Tc)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 320mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 1024492-BSS138BKW,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS138BKW,115 CAD Model

Description

The Nexperia USA Inc. BSS138BKW,115 is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 320mA @ 25°C.

  • Maximum Rds On @ Id, Vgs: 1.6 Ohm @ 320mA and 10V
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 0.7nC @ 4.5V
  • Maximum Input Capacitance: 56pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 260mW (Ta) and 830mW (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: SOT-323-3
  • Dimension: SC-70, SOT-323
  • Mounting: SMD (SMT) technology

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1165 $50.0950
1,050+ $0.0956 $100.3800
1,620+ $0.0926 $150.0120
2,235+ $0.0896 $200.2560
2,890+ $0.0866 $250.2740
3,865+ $0.0777 $300.3105
!
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Availability: 115,610 pieces
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