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Same model may have multiple batches, images only for reference.
BSS138PS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSS138PS,115

Part No BSS138PS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.32A 6TSSOP
Datasheet
BSS138PS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 320mA
Maximum Rds On at Id,Vgs 1.6 Ohm @ 300mA, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.8nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Power Dissipation 420mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1024498-BSS138PS,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS138PS,115 CAD Model

Description

The BSS138PS,115 is a dual N-channel logic level gate FET with a maximum power dissipation of 420mW.

  • Maximum Power Dissipation: 420mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 320mA @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 0.8nC @ 4.5V
  • Package Type: 6-TSSOP
  • Operating Temperature Range: 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0708 $50.2680
1,510+ $0.0663 $100.1130
2,345+ $0.0641 $150.3145
3,360+ $0.0596 $200.2560
4,360+ $0.0574 $250.2640
5,445+ $0.0551 $300.0195
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