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BSS138PS,115

Part No BSS138PS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.32A 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 320mA
Maximum Rds On at Id,Vgs 1.6 Ohm @ 300mA, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.8nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Power Dissipation 420mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1024498-BSS138PS,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS138PS,115 CAD Model

Description

The BSS138PS,115 is a dual N-channel logic level gate FET with a maximum power dissipation of 420mW.

  • Maximum Power Dissipation: 420mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 320mA @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 0.8nC @ 4.5V
  • Package Type: 6-TSSOP
  • Operating Temperature Range: 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0708 $50.2680
1,510+ $0.0663 $100.1130
2,345+ $0.0641 $150.3145
3,360+ $0.0596 $200.2560
4,360+ $0.0574 $250.2640
5,445+ $0.0551 $300.0195
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 127,260 pieces
MOQ: 710 pcs
Order Increment : 1 pcs
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