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BUK9506-75B,127

Part No BUK9506-75B,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 95nC @ 5V
Max Input Capacitance 11693pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025337-BUK9506-75B,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK9506-75B,127 CAD Model

Description

The BUK9506-75B,127 is a MOSFET N-channel power transistor manufactured by Nexperia USA Inc..

  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Case/Package: TO-220AB
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 75A (Tc)
  • Maximum Gate-Source Voltage: ±15V
  • Maximum Rds On: 5.5 mOhm @ 25A, 10V
  • Application: Industrial
  • Pieces per Package: 50

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