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Same model may have multiple batches, images only for reference.
BUK9624-55A,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9624-55A,118

Part No BUK9624-55A,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 46A D2PAK
Datasheet
BUK9624-55A,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 1815pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 105W (Tc)
Maximum Rds On at Id,Vgs 21.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025383-BUK9624-55A,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK9624-55A,118 CAD Model

Description

The Nexperia USA Inc. BUK9624-55A,118 MOSFET is a powerful N-Channel device designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 46A @ 25°C
  • Power Dissipation: 105W (Tc)
  • Maximum Rds On @ Id,Vgs: 21.7 mOhm @ 25A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: D2PAK
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Input Capacitance: 1815pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Popular
  • Supply and Demand Status: Sufficient

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