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Same model may have multiple batches, images only for reference.
BUK9660-100A,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9660-100A,118

Part No BUK9660-100A,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 26A D2PAK
Datasheet
BUK9660-100A,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 1924pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 58 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025398-BUK9660-100A,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9660-100A,118 CAD Model

Description

The MOSFET is a high-performance N-channel power MOSFET designed for use in a variety of applications manufactured by Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 26A
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On: 58 mOhm @ 15A and 10V
  • Power Dissipation: 106W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Package: D2PAK
  • Maximum Input Capacitance: 1924pF @ 25V
  • Applications: Power Supplies, Motor Control, and Lighting

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