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Same model may have multiple batches, images only for reference.
MJD31CJ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

MJD31CJ

Part No MJD31CJ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 3A DPAK
Datasheet
MJD31CJ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V
Power - Max 1.6 W
Frequency - Transition 3MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number MJD31
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1377145-MJD31CJ
Ultra Librarian 3D Model Ultra Librarian MJD31CJ CAD Model

Description

The MJD31CJ is an NPN bipolar transistor from Nexperia USA Inc.

  • Mounting Type: Surface Mount
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Collector Current (Max): 3A
  • Collector-Emitter Breakdown Voltage (Max): 100V
  • DC Current Gain: 25 @ 1A and 4V
  • Saturation Voltage: 1.2V @ Base Current 375mA, Collector Current 3A
  • Collector Cutoff Current: 1μA
  • Transition Frequency: 3MHz
  • Power (Max): 1.6W
  • REACH Status: Unaffected
  • ECCN: EAR99

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660+ $0.3788 $250.0080
885+ $0.3396 $300.5460
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