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Same model may have multiple batches, images only for reference.
NX3008CBKV,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

NX3008CBKV,115

Part No NX3008CBKV,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V SOT666
Datasheet
NX3008CBKV,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 400mA, 220mA
Maximum Rds On at Id,Vgs 1.4 Ohm @ 350mA, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 0.68nC @ 4.5V
Max Input Capacitance 50pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1084183-NX3008CBKV,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NX3008CBKV,115 CAD Model

Description

The Nexperia USA Inc. NX3008CBKV,115 is an N and P-channel FET that has a maximum power dissipation of 500mW.

  • Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 400mA @ 25°C
  • Gate Type: Logic Level
  • Package: SOT-666
  • Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
185+ $0.2713 $50.1905
450+ $0.2227 $100.2150
700+ $0.2157 $150.9900
960+ $0.2087 $200.3520
1,240+ $0.2018 $250.2320
1,660+ $0.1809 $300.2940
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