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PBHV8115T,215

Part No PBHV8115T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 150V 1A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 350mV @ 200mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 50 @ 500mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086342-PBHV8115T,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBHV8115T,215 CAD Model

Description

The PBHV8115T,215 from Nexperia USA Inc. is an NPN transistor with a maximum collector-emitter breakdown voltage (VCEO) of 150V and a maximum current collector of 1A.

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN
  • Maximum Collector-Emitter Breakdown Voltage (VCEO): 150V
  • Maximum Current Collector: 1A
  • Collector Cut-off Current (max): 100nA
  • Typical Gain (hFE) (min): 50 @ 500mA, 10V
  • Package: TO-236AB (SOT23)
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 300mW
  • Operating Temperature Range: 150°C (TJ)
  • Ideal for: Discrete semiconductor products and other electronic components

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2400 $62.0000
100+ $1.1600 $116.0000
150+ $1.1200 $168.0000
220+ $1.0400 $228.8000
280+ $1.0000 $280.0000
350+ $0.9601 $336.0350
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