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Same model may have multiple batches, images only for reference.
PBHV8118T,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBHV8118T,215

Part No PBHV8118T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 180V 1A SOT23
Datasheet
PBHV8118T,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 180V
Max Vce (sat) 50mV @ 20mA, 100mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 50 @ 500mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086345-PBHV8118T,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBHV8118T,215 CAD Model

Description

The Nexperia USA Inc. PBHV8118T,215 is an NPN transistor with a maximum collector-emitter breakdown voltage of 180V.

  • Maximum Current Collector: 1A
  • Maximum Power Dissipation: 300mW
  • Maximum Vce (sat): 50mV @ 20mA and 100mA
  • Collector Cut-Off Current (max): 100nA
  • Typical Gain (hFE) (min): 50 @ 500mA and 10V
  • Temperature Range: 150°C (TJ)
  • Mounting: SMD (SMT)
  • Package: TO-236AB (SOT23)
  • Supply and Demand Status: balanced.

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