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Same model may have multiple batches, images only for reference.
RN4988(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4988(T5L,F,T)

Part No RN4988(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4988(T5L,F,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092530-RN4988(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4988(T5L,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage RN4988(T5L,F,T) is a dual pre-biased NPN and PNP transistor polarity product that is manufactured by Toshiba Semiconductor and Storage.

  • Category: Discrete Semiconductor Products
  • Packaging: US6
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 100μA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 200mW
  • Frequency Transition: 250MHz, 200MHz
  • Resistor-Base (R1) (Ohms): 22k
  • Resistor-Emitter Base (R2) (Ohms): 47k
  • Supply and Demand: Balanced
  • Lifecycle Status: Active
  • RoHS Compliant: Yes

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