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Same model may have multiple batches, images only for reference.
PBSS303ND,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS303ND,115

Part No PBSS303ND,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 1A 6TSOP
Datasheet
PBSS303ND,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 515mV @ 600mA, 6A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 345 @ 500mA, 2V
Maximum Power Dissipation 1.1W
Frequency - Transition 140MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086413-PBSS303ND,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS303ND,115 CAD Model

Description

The Nexperia USA Inc. PBSS303ND,115 is an NPN transistor with a maximum collector-emitter breakdown voltage of 60V and a maximum current collector of 1A.

  • Maximum Collector-Emitter Breakdown Voltage: 60V
  • Maximum Current Collector: 1A
  • Vce (sat): 515mV @ 600mA, 6A
  • Typical Gain (hFE) (Min): 345 @ 500mA, 2V
  • Package: 6-TSOP
  • Collector Cut-off Current (Max): 100nA
  • Temperature Range: Up to 150°C
  • Popularity: Popular
  • Supply and Demand Status: Balance

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