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Same model may have multiple batches, images only for reference.
PBSS306PZ,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS306PZ,135

Part No PBSS306PZ,135
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 4.1A SOT-223
Datasheet
PBSS306PZ,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 4.1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 325mV @ 410mA, 4.1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 2A, 2V
Maximum Power Dissipation 2W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 1086432-PBSS306PZ,135
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS306PZ,135 CAD Model

Description

The PBSS306PZ,135 is a PNP transistor from Nexperia USA Inc.

  • Collector-Emitter Breakdown Voltage: 100V
  • Maximum Current Collector: 4.1A
  • Typical Gain (hFE): 100 @ 2A, 2V
  • Power Dissipation: 2W
  • Temperature Range: Up to 150°C (TJ)
  • Collector-Emitter Saturation Voltage: 325mV @ 410mA, 4.1A
  • Package: SOT-223
  • Application: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
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