The PBSS4160QAZ is a high-performance NPN bipolar transistor from Nexperia USA Inc. that is designed for use in discrete semiconductor products.

• Category: Bipolar (BJT) - Single
• Maximum Power: 1 W
• Voltage - Collector Emitter Breakdown: 60 V
• Current - Collector (Ic) (Max): 1 A
• Transistor Type: NPN
• Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
• Frequency-Transition: 180MHz
• Package/Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3
• Operating Temperature Range: 150°C (TJ)