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Same model may have multiple batches, images only for reference.
PBSS4350T,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4350T,215

Part No PBSS4350T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 2A SOT23 / Trans GP BJT NPN 50V 2A 1200mW Automotive 3-Pin SOT-23 T/R
Datasheet
PBSS4350T,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 370mV @ 300mA, 3A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 300 @ 1A, 2V
Maximum Power Dissipation 540mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086487-PBSS4350T,215
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name PBSS4350T
Introduction Date August 08, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PBSS4350T,215 CAD Model

Description

The PBSS4350T,215 is an NPN transistor with a maximum collector-emitter breakdown voltage of 50V, manufactured by Nexperia USA Inc.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 2A
  • Typical Gain (hFE): 300 @ 1A, 2V
  • Maximum Power Dissipation: 540mW
  • Frequency Transition: 100MHz
  • Mounting: SMD (SMT)
  • Package: TO-236AB (SOT23)
  • Maximum Vce (sat): 370mV @ 300mA and 3A

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Pricing & Ordering

Quantity Unit Price Ext. Price
470+ $0.1070 $50.2900
1,000+ $0.1002 $100.2000
1,550+ $0.0968 $150.0400
2,225+ $0.0900 $200.2500
2,885+ $0.0867 $250.1295
3,605+ $0.0833 $300.2965
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MOQ: 470 pcs
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