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Same model may have multiple batches, images only for reference.
PDTA114TMB,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTA114TMB,315

Part No PDTA114TMB,315
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW 3DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tape and Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 200 at 1mA, 5V
Vce Saturation (Maximum) at Ib, Ic 150mV at 500μA, 10mA
Current - Collector Cutoff (Maximum) 1μA
Frequency - Transition 180MHz
Maximum Power 250mW
Mounting Style SMD
Manufacturer Package 3-XFDFN
Supplier Device Package DFN1006B-3
Family Part Number PDTA114
Manufacturer Pack Quantity 10,000
MSL Level 1 (Unlimited)
Win Source Part Number 755573-PDTA114TMB,315
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTA114TMB,315 CAD Model

Description

The Nexperia USA Inc. transistor is a PNP pre-biased transistor that is suitable for various applications.

  • Maximum Current Collector: 100mA
  • Voltage Collector-Emitter Breakdown: 50V
  • Popularity: Low
  • Package: DFN1006B-3
  • Mounting Style: SMD
  • Frequency-Transition: 180MHz
  • Transistor Type: PNP
  • Manufacturer Package: 3-XFDFN
  • Manufacturer's Homepage: www.nexperia.com
  • Status: in the open market
  • Supply and Demand Status: Sufficient
  • Family Part Number: PDTA114
  • Manufacturer Pack Quantity: 10,000
  • MSL Level: 1 (Unlimited)
  • Vce Saturation @ Ib, Ic: 150mV @ 500μA, 10mA
  • DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 1mA, 5V
  • Maximum Power: 250mW
  • Resistor-Base: 10 kOhms

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