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Same model may have multiple batches, images only for reference.
PDTA115TU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTA115TU,115

Part No PDTA115TU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT323
Datasheet
PDTA115TU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087167-PDTA115TU,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTA115TU,115 CAD Model

Description

The PNP Pre-Biased Transistor with Win Source Part Number 1087167-PDTA115TU,115 is an ideal SMD (SMT) mounting component from Nexperia USA Inc. for discrete semiconductor products.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Typical Gain (hFE): 100 @ 1mA, 5V
  • Collector Cut-Off Current: 1μA
  • Maximum Vce (sat): 150mV @ 250μA, 5mA
  • Base Resistance (R1): 100k Ohms
  • Emitter-Base Resistance (R2): no resistance

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